2 / 3 page

Product Specification
www.jmnic.com
JMnic
Silicon NPN Power Transistors
2SD552
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
180
V
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=1A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=1A
2.5
V
ICBO
Collector cut-off current
VCB=220V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=5V
25
80
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
160
pF
fT
Transition frequency
IC=1A ; VCE=10V
4
MHz