DMHC6070LSD

Document number: DS38714 Rev. 1 - 2

7 of 10

www.diodes.com

April 2016

© Diodes Incorporated

DMHC6070LSD

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-50

-25

0

25

50

75

100

125

150

V

= -4.5V

GS

I

= -2A

D

V

= -10V

GS

I = -5A

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 18 On-Resistance Variation with Temperature

0

0.1

0.2

0.3

-50

-25

0

25

50

75

100

125

150

V

= -4.5V

GS

I = -2A

D

V

= -10V

GS

I = -5A

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 19 On-Resistance Variation with Temperature

0

0.5

1

1.5

2

2.5

3

-50

-25

0

25

50

75

100

125

150

I = -1mA

D

I = -250µA

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 20 Gate Threshold Variation vs. Ambient Temperature

0

3

6

9

12

15

0

0.3

0.6

0.9

1.2

1.5

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 21 Diode Forward Voltage vs. Current

10

100

1000

10000

0

5

10

15

20

25

30

Ciss

Coss

Crss

f=1MHz

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 22 Typical Junction Capacitance

0

2

4

6

8

10

0

2

4

6

8

10

V

= -30V

DS

I = -2A

D

Q , TOTAL GATE CHARGE (nC)

g

Figure 23 Gate Charge