4

PI3USB4000A

A product Line of

Diodes Incorporated

www.diodes.com

January 2019

Diodes Incorporated

PI3USB4000A

Document Number DS40145 Rev 3-2

Storage Temperature ..........................................................–65°C to +150°C

Supply Voltage (VDD) to Ground Potential .........................–0.3V to +9V

Channel Input/Output Voltage (Lx+/-) .................................–0.3V to +6V

Channel Input/Output Voltage (C0+/-) ...............................–0.3V to +18V

Control Pins Input Voltage (EN/SEL) ....................................–0.3V to +6V

ESD (All Pins).............................................2KV (HBM) and 1KV (CDM)

Channel Input/Output Current (Lx/C0)...........................................±50mA

Junction Temperature ............................................................................125oC

Note:

Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

Maximum Ratings

(Above which useful life may be impaired. For user guidelines, not tested.)

Recommended Operating Conditions

Symbol

Description

Test Conditions

Min.

Typ. Max. Units

VDD

Power Supply

2.7

3.3

6.0

V

VIO

Analog Voltage Range

0

5.5

V

VI

Voltage Range for Control Pins

0

5.5

V

IDD

Current Consumption in Normal Operation VDD =3.3V, VIO =0V, SEL= GND

or VDD, EN= Low

35

45

µA

IDD_OVP

Current Consumption in OVP

VDD=3.3V, VC0+/VC0-=5.5V,

SEL=GND or VDD, EN=Low

35

µA

IDDQ

Chip Disabled Current Consumption

VDD =3.3V, VIO =0V, SEL= GND

or VDD, EN= High

1

2

µA

TA

Operating Temperature Range

-40

85

oC

DC Electrical Characteristics for Switching over Operating Range

(TA = -40°C to 85°C, Typical values are at VDD = 3.3V, TA = 25°C, (unless otherwise noted))

Parameter

Description

Test Conditions

Min.

Typ. Max. Units

Control Pins – EN/SEL

VIH - cntrl signals Input HIGH Voltage for SEL and EN

VDD = 2.7-5.5V

1.2

V

VIL - cntrl signals Input LOW Voltage for SEL and EN

VDD = 2.7-5.5V

0.6

V

IIH

Input HIGH Current for SEL and EN

VI = 0-5.5V

-1

1

µA

IIL

Input LOW Current for SEL and EN

VI = 0-5.5V

-1

1

µA

High Speed IO – L0/L1/C0

VOVP

OVP trigger voltage

4.6

4.75

5.0

V

Ron

ON resistance

VI/O = 0V, 0.4V, Ion = –8 mA

5

8

Ω

Δ Ron

On resistance between + and – channel VI/O = 0V, 0.4V, Ion = –8 mA

0.5

1

Ω

Ron_Flat

ON resistance flatness

VI/O = 0V, 0.4V, Ion = –8 mA

0.2

0.5

Ω

Ioff

Power-off leakage

VDD = 0V, VI/O = 0 – 3.6V

-1

1

µA

IOC

Channel off leakage current

EN=VDD=3.3V, VI/O=0-3.6V

-1

1

µA

ION

Channel on leakage current

EN=0V, VDD=3.3V, VI/O=0-

3.6V

-1

1

µA

IOVP

Leakage current on C0+/C0- in OVP

mode

EN=0V, VDD=3.3V, VC0+ or

VC0-=14V

3

15

µA