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STL36DN6F7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL36DN6F7 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page  May 2017 DocID028259 Rev 3 1/15 This is information on a product in full production. www.st.com STL36DN6F7 Dual N- channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STL36DN6F7 60 V 27 mΩ 33 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL36DN6F7 36DN6F7 PowerFLAT™ 5x6 double island Tape and reel |
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