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STAC0912-250 Datasheet(PDF) 3 Page - STMicroelectronics |
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STAC0912-250 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 16 page ![]() 2 Electrical characteristics (TC = 25 °C unless otherwise specified) 2.1 Static Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, IDS = 10 mA 80 V IDSS Zero gate voltage drain leakage current VGS = 0 V, VDS = 28 V 2 μA IGSS Gate-source leakage current VGS = 15 V, VDS = 0 V 1 μA VGS(Q) Gate quiescent voltage VDS = 28 V, IDS = 150 mA 2.0 5.0 V VDS(on) Drain-source on voltage VGS = 10 V, IDS = 6 A 550 600 mV GFS Forward transconductance VDS = 10 V, IDS = 6 A 2.5 S 2.2 Dynamic Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit f Frequency 960 1215 MHz POUT Output power PIN = 12 W 250 285 W GPS Power gain POUT = 250 W 14 16.3 dB ŋD Drain efficiency POUT = 250 W 50 58 % tr Rise time POUT = 250 W 25 ns tf Fall time POUT = 250 W 10 ns ΔGPS Gain variation POUT = 250 W, gain droop within the pulse 0.2 dB VSWR Load mismatch All phase angles at POUT = 250 W 10:1 Note: VDD = 36 V, IDQ = 150 mA, pulse width = 100 μs, duty cycle = 10%. STAC0912-250 Electrical characteristics DS7201 - Rev 9 page 3/16 |
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