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STAC0912-250 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STAC0912-250
Description  LDMOS avionics radar transistor
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STAC0912-250 Datasheet(HTML) 3 Page - STMicroelectronics

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2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
2.1
Static
Table 4. Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, IDS = 10 mA
80
V
IDSS
Zero gate voltage drain leakage
current
VGS = 0 V, VDS = 28 V
2
μA
IGSS
Gate-source leakage current
VGS = 15 V, VDS = 0 V
1
μA
VGS(Q)
Gate quiescent voltage
VDS = 28 V, IDS = 150 mA
2.0
5.0
V
VDS(on)
Drain-source on voltage
VGS = 10 V, IDS = 6 A
550
600
mV
GFS
Forward transconductance
VDS = 10 V, IDS = 6 A
2.5
S
2.2
Dynamic
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
f
Frequency
960
1215
MHz
POUT
Output power
PIN = 12 W
250
285
W
GPS
Power gain
POUT = 250 W
14
16.3
dB
ŋD
Drain efficiency
POUT = 250 W
50
58
%
tr
Rise time
POUT = 250 W
25
ns
tf
Fall time
POUT = 250 W
10
ns
ΔGPS
Gain variation
POUT = 250 W, gain droop within
the pulse
0.2
dB
VSWR
Load mismatch
All phase angles at POUT = 250 W
10:1
Note:
VDD = 36 V, IDQ = 150 mA, pulse width = 100 μs, duty cycle = 10%.
STAC0912-250
Electrical characteristics
DS7201 - Rev 9
page 3/16



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