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STS5DP3LLH6 Datasheet(PDF) 5 Page - STMicroelectronics |
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STS5DP3LLH6 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() STS5DP3LLH6 Electrical characteristics DocID025864 Rev 3 5/14 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on-voltage ISD = -5 A, VGS = 0 V - -1.1 V trr Reverse recovery time ISD = -5 A, di/dt = 100 A/µs, VDD = -16 V, TJ = 150 °C - 11.2 ns Qrr Reverse recovery charge - 3.5 nC IRRM Reverse recovery current - -0.6 A Notes: (1)Pulsed: Pulse duration = 300 µs, duty cycle 1.5% |
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