VS-104MT..KPbF Series

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Vishay Semiconductors

Revision: 14-Sep-17

2

Document Number: 94351

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Note

(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 104MT160KBS90

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum IRMS output current at case temperature

IO

For all conduction angle

100

A

80

°C

Maximum peak, one-cycle forward, non-repetitive

on state surge current

ITSM

t = 10 ms

No voltage



reapplied

Initial



TJ = TJ maximum

1130

A

t = 8.3 ms

1180

t = 10 ms

100 % VRRM

reapplied

950

t = 8.3 ms

1000

Maximum I2t for fusing

I2t

t = 10 ms

No voltage



reapplied

6380

A2s

t = 8.3 ms

5830

t = 10 ms

100 % VRRM

reapplied

4510

t = 8.3 ms

4120

Maximum I2

t for fusing

I2

t

t = 0.1 ms to 10 ms, no voltage reapplied

63 800

A2

s

Low level value of threshold voltage

VT(TO)1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ maximum

0.99

V

High level value of threshold voltage

VT(TO)2

(I >

 x I

T(AV)), TJ maximum

1.15

Low level value on-state slope resistance

rt1

16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ maximum

3.90

m



High level value on-state slope resistance

rt2

(I >

 x I

T(AV)), TJ maximum

3.48

Maximum on-state voltage drop

VTM

Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction

1.53

V

Maximum non-repetitive rate of rise of turned on

current

dI/dt

TJ = 25 °C, from 0.67 VDRM, ITM =  x IT(AV),

Ig = 500 mA, tr < 0.5 μs, tp > 6 μs

150

A/μs

Maximum holding current

IH

TJ = 25 °C, anode supply = 6 V, resistive load, grate

open circuit

200

mA

Maximum latching current

IL

TJ = 25 °C, anode supply = 6 V, resistive load

400

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

RMS isolation voltage

VINS

TJ = 25 °C all terminal shorted

f = 50 Hz, t = 1 s

4000

V

Maximum critical rate of rise of off-state voltage

dV/dt (1)

TJ = TJ maximum, linear to 0.67 VDRM, 

gate open circuit

500

V/μs

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

PGM

TJ = TJ maximum

10

W

Maximum average gate power

PG(AV)

2.5

Maximum peak gate current

IGM

2.5

A

Maximum peak negative gate voltage

- VGT

10

V

Maximum required DC gate voltage to trigger

VGT

TJ = 40 °C

Anode supply = 6 V, resistive load

4.0

TJ = 25 °C

2.5

TJ = 125 °C

1.7

Maximum required DC gate current to trigger

IGT

TJ = -40 °C

270

mA

TJ = 25 °C

150

TJ = 125 °C

80

Maximum gate voltage that will not trigger

VGD

TJ = TJ maximum, rated VDRM applied

0.25

V

Maximum gate current that will not trigger

IGD

6mA