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VS-104MT..K Datasheet(PDF) 3 Page - Vishay Siliconix |
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VS-104MT..K Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 8 page ![]() VS-104MT..KPbF Series www.vishay.com Vishay Semiconductors Revision: 14-Sep-17 3 Document Number: 94351 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and storage temperature range TJ, TStg -40 to +125 °C Maximum thermal resistance, junction to case RthJC DC operation per single AC switch 0.34 K/W DC operation per junction 0.69 180 °C sine conduction angle per single AC switch 0.36 180 °C sine conduction angle per junction 0.72 Maximum thermal resistance, case to heat sink RthCS Per module Mounting surface smooth, flat and greased 0.03 Mounting torque ± 100 % to heat sink A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 4 to 6 Nm to terminal 3 to 4 Approximate weight 225 g R CONDUCTION PER JUNCTION DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 104MT.K 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082 K/W 90 80 70 60 120 130 100 110 RMS Output Current (A) 20 40 100 120 60 80 0 104MT..K Series Device fully turned-on Per single AC switch For all conduction angles I RMS ~ 1 100 10 1000 Instantaneous On-State Voltage (V) 1234 5 0 T J = 25 °C 104MT..K Series Per junction T J = 125 °C |
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