temperature.

APT Reserves the right to change, without notice, the specifications and information contained herein.

DYNAMIC CHARACTERISTICS

APT60M80JVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= 0.5 I

D[Cont.]

@ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

R

G

= 0.6

Ω

Ω

Ω

Ω

Ω

MIN

TYP

MAX

12022

14500

1571

2200

668

1010

576

870

56

68

288

440

15

30

25

50

73

110

31

40

UNIT

pF

nC

ns

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

MIN

TYP

MAX

55

220

1.3

937

29

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

.22

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

Characteristic / Test Conditions

Continuous Source Current

(Body Diode)

(Body Diode)

GS

= 0V, I

S

= -I

D[Cont.]

)

Reverse Recovery Time (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

1.0

10

RECTANGULARPULSEDURATION(SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.25

0.1

0.05

0.01

0.005

0.001

0.1

0.02

0.05

0.2

0.01

D=0.5

SINGLE PULSE