APT6010B2FLL datasheet(2/5 Pages) ADPOW

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DYNAMIC CHARACTERISTICS

APT6010B2FLL_LFLL

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

SINGLE PULSE

10-5

10-4

10-3

10-2

10-1

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

0.20

0.16

0.12

0.08

0.04

0.5

0.1

0.3

0.7

0.9

0.05

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMALCHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -54A)

Peak Diode Recovery dv/dt 5

Reverse Recovery Time

(IS = -54A, di/dt = 100A/µs)

Reverse Recovery Charge

(IS = -54A, di/dt = 100A/µs)

Peak Recovery Current

(IS = -54A, di/dt = 100A/µs)

Symbol

ISM

VSD

dv/dt

trr

Qrr

IRRM

UNIT

Amps

Volts

V/ns

µC

Amps

MIN

TYP

MAX

216

1.3

Tj = 25°C

300

Tj = 125°C

600

Tj = 25°C

2.7

Tj = 125°C

7.8

Tj = 25°C

Tj = 125°C

Symbol

RθJC

RθJA

MIN

TYP

MAX

0.18

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

iss

oss

rss

d(on)

d(off)

off

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy 6

Turn-off Switching Energy

Turn-on Switching Energy 6

Turn-off Switching Energy

Test Conditions

GS = 0V

DS = 25V

f = 1 MHz

GS = 10V

DD = 300V

D = 54A @ 25°C

RESISTIVESWITCHING

GS = 15V

DD = 300V

D = 54A@ 25°C

G = 0.6Ω

INDUCTIVE SWITCHING @ 25°C

DD = 400V, VGS = 15V

D = 54A, RG = 5Ω

INDUCTIVE SWITCHING @ 125°C

DD = 400V VGS = 15V

D = 54A, RG = 5Ω

MIN

TYP

MAX

6710

1250

150

885

970

1150

1220

UNIT

µJ

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 2.06mH, RG = 25Ω, Peak IL = 54A

5 dv

/dt numbers reflect the limitations of the test circuit rather than the

device itself. I

S ≤ -ID54A

di/dt ≤ 700A/µs V

R ≤ 600V

J ≤ 150°C

6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and inforation contained herein.

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