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APTGS10X120BTP2 Datasheet(PDF) 2 Page - Advanced Power Technology

Part # APTGS10X120BTP2
Description  Input rectifier bridge Brake 3 Phase Bridge NPT IGBT Power Module
PDF  4 Pages
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APTGS10X120BTP2 Datasheet(HTML) 2 Page - Advanced Power Technology

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APTGS10X120RTP2
APTGS10X120BTP2
APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake (only for APTGS10X120BTP2) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
20
IC
Continuous Collector Current
TC = 80°C
10
ICM
Pulsed Collector Current
TC = 25°C
20
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
100
W
IF
DC Forward Current
TC = 80°C
10
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
20
IC
Continuous Collector Current
TC = 80°C
10
ICM
Pulsed Collector Current
TC = 25°C
25
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
100
W
SCSOA Short circuit Safe Operating Area
Tj = 125°C
45A @ 720V
IF
DC Forward Current
TC = 80°C
10
IFSM
Surge Forward Current
tp = 1ms
TC = 80°C
20
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
2
mA
IF = 30A
Tj = 25°C
1.3
1.5
VF
Forward Voltage
IF = 10A
Tj = 150°C
0.9
0.95
V
RthJC
Junction to Case
1
°C/W
IGBT Brake & Diode (only for APTGS10X120BTP2) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
0.5
500
µA
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
0.8
mA
Tj = 25°C
2.4
2.85
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 10A
Tj = 125°C
2.75
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.35mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
300
nA
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
600
pF
Tj = 25°C
2.2
2.55
VF
Forward Voltage
VGE = 0V
IF = 10A
Tj = 125°C
2.1
V
IGBT
1.2
RthJC
Junction to Case
Diode
2.3
°C/W



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