APTM50AM24SC datasheet(2/7 Pages) ADPOW

2 / 7 page

APTM50AM24SC

APT website – http://www.advancedpower.com

2 – 7

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

BVDSS

Drain - Source Breakdown Voltage

VGS = 0V, ID = 1.5mA

500

VGS = 0V,VDS = 500V

Tj = 25°C

500

µA

IDSS

Zero Gate Voltage Drain Current

VGS = 0V,VDS = 400V

Tj = 125°C

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 75A

Ω

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 6mA

IGSS

Gate – Source Leakage Current

VGS = ±30 V, VDS = 0V

±500

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

19.6

Coss

Output Capacitance

4.2

Crss

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz

0.3

Total gate Charge

434

Qgs

Gate – Source Charge

120

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 250V

ID = 150A

216

Td(on)

Turn-on Delay Time

Rise Time

Td(off)

Turn-off Delay Time

Fall Time

Inductive switching @ 125°C

VGS = 15V

VBus = 333V

ID = 150A

RG = 0.8Ω

SiC Parallel diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VRRM

Maximum Peak Repetitive Reverse Voltage

600

Tj = 25°C

400

1600

IRRM

Maximum Reverse Leakage Current

VR=600V

Tj = 125°C

800

8000

µA

IF(AV)

Maximum Average Forward Current

50% duty cycle

Tc = 125°C

Tj = 25°C

1.6

1.8

Diode Forward Voltage

IF = 80A

Tj = 175°C

2.0

2.4

Total Capacitive Charge

IF = 80A, VR = 300V

di/dt =2000A/µs

112

f = 1MHz, VR = 200V

520

Total Capacitance

f = 1MHz, VR = 400V

400

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