DMTH45M5LPSWQ

Document number: DS44402 Rev. 3 - 2

2 of 8

www.diodes.com

August 2022

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DMTH45M5LPSWQ

Marking Information

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current, VGS = 10V (Note 5)

TC = +25°C

TC = +100°C

ID

86

60

A

Maximum Continuous Body Diode Forward Current (Note 5)

IS

86

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

344

A

Pulsed Body Diode Forward Current (1

0μs Pulse, Duty Cycle = 1%)

ISM

344

A

Avalanche Current, L = 0.1mH

IAS

19.2

A

Avalanche Energy, L = 0.1mH

EAS

18.4

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

TA = +25°C

PD

3.5

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

42

°C/W

Total Power Dissipation (Note 5)

TC = +25°C

PD

72

W

Thermal Resistance, Junction to Case (Note 5)

RθJC

2

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Notes:

5. Thermal resistance from junction to soldering point (on the exposed drain pad).

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

S

D

S

S

G

D

D

D

TH45M5LS

YY WW

= Manufacturer’s Marking

TH45M5LS = Product Type Marking Code

YYWW = Date Code Marking

YY = Year Code (ex: 22 = 2022)

WW = Week Code (01 to 53)