BAS16HT1 datasheet(1/2 Pages) ETL

Part #	BAS16HT1

Description	Switching Diode

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ETL [E-Tech Electronics LTD]

Direct Link	http://e-tech.com.hk

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1 / 2 page

S7–1/2

Switching Diode

CASE 477– 02, STYLE 1

SOD– 323

1

2

BAS16HT1

2

ANODE

1

CATHODE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

V R

75

Vdc

Peak Forward Current

I F

200

mAdc

Peak Forward Surge Current

I FM(surge)

500

mAdc

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,*

P D

200

mW

T A = 25°C

Derate above 25°C

1.57

mW/°C

Thermal Resistance Junction to Ambient

R

θJA

635

°C/W

Junction and Storage Temperature

T J , T stg

150

°C

**FR-4 Minimum Pad

DEVICEMARKING

BAS16HT1 = A6

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFFCHARACTERISTICS

Reverse Voltage Leakage Current

(V R = 75 Vdc)

(V R = 75 Vdc, T J = 150°C)

(V R = 25 Vdc, T J = 150°C)

I R

—

1.0

50

30

µAdc

Reverse Breakdown Voltage

(I BR = 100

µAdc)

V (BR)

75

—

Vdc

Forward Voltage

(I F = 1.0 mAdc)

(I F = 10 mAdc)

(I F = 50 mAdc)

(I F = 150 mAdc)

V F

—

715

855

1000

1250

mV

Diode Capacitance

(V R = 0, f = 1.0 MHz)

Reverse Recovery Time

(I F = I R = 10 mAdc, R L = 50

Ω)

C D

—

2.0

pF

Forward Recovery Voltage

(I F = 10 mAdc, t r = 20 ns)

V FR

—

1.75

Vdc

t rr

—

6.0

ns

Stored Charge

(I F = 10 mAdc to V R = 5.0 Vdc, R L = 500

Ω)

Q S

—45

pC

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