AMT8630

ADVANCED PRODUCT INFORMATION – Rev 0.0

2

01/2006

ELECTRICAL CHARACTERISTICS

Table 1: Absolute Maximum Ratings

PARAMETER

MIN

MAX

UNIT

Supply Voltage

-0.5

4.0

V

Photodiode bias Voltage

2

10

V

Optical Input Power

-

+ 10

dBm

Storage Temperature

- 40

+ 125

oC

Stresses in excess of the absolute ratings may cause permanent damage. Functional

operation is not implied under these conditions. Exposure to absolute ratings for extended

periods of time may adversely affect reliability.

Table 2: Electrical Specifications

PARAMETER

MIN

TYP

MAX

UNIT

Wavelength

1250

-

1620

nm

Sensitivity

(1)

-

-20

-19

dB

Overload

-

3

-

dBm

Responsivity 1550nm

0.80

0.90

-

A/W

Responsivity 1310nm

0.75

0.85

-

A/W

Dark current

-

0.2

5

nA

Small signal transimpedance gain (differential)

10.5

12

13.5

K

Ω

Small signal 3dB bandwidth

7

8

10

GHz

Low frequency cutoff

-

10

45

KHz

Output return loss (differential)

(2)

-

9

-

dB

Output voltage swing (differential)

350

450

650

Optical return loss

50

55

-

dB

Photodiode bias voltage

2.5

3.3

9

V

TIA supply voltage

3.1

3.3

3.5

V

TIA supply current

-

32

-

mA

Power consumption

85

105

142

mW

Operating temperature

-40

25

85

oC

(1)

10Gb/s PRBS 2

(2)

Figure 2: Pin location

1

2

3

4

5

Table 3: Pin description

PIN

NAME

DESCRIPTION

1

VOUTP

Non-inverted output voltage. Logical ‘1’ with

an optical input. Output is not AC coupled.

2

Amplifier supply voltage: 3.3V

3

Photodiode bias: 3.3V

4

VOUTN

Inverted output voltage: Logical ‘0’ with an

optical input. Output is not AC coupled

5

Ground

Ground