DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLD3003DO

type contains Two (2) Isolated Opposing Configuration,

Silicon Switching Diodes, manufactured by the epitaxial

mount package. These devices are designed for

switching applications requiring extremely low leakage.

MARKING CODE: C30

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

180

V

Average Rectified Current

IO

200

mA

Continuous Forward Current

IF

600

mA

Peak Repetitive Forward Current

IFRM

700

mA

Forward Surge Current, tp=1 µsec.

IFSM

2.0

A

Forward Surge Current, tp=1 sec.

IFSM

1.0

A

Power Dissipation

PD

250

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

500

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=125V

1.0

nA

IR

VR=125V, TA=150°C

3.0

µA

IR

VR=180V

10

nA

IR

VR=180V, TA=150°C

5.0

µA

BVR

IR=5.0µA

200

V

VF

IF=1.0mA

0.62

0.72

V

VF

IF=10mA

0.72

0.83

V

VF

IF=50mA

0.80

0.89

V

VF

IF=100mA

0.83

0.93

V

VF

IF=200mA

0.87

1.10

V

VF

IF=300mA

0.90

1.15

V

CT

VR=0, f=1 MHz

4.0

pF

CMLD3003DO

SURFACE MOUNT

DUAL, ISOLATED, OPPOSING

LOW LEAKAGE SILICON

SWITCHING DIODES

Central

Semiconductor Corp.

TM

R0 (07-June 2004)

SOT-563 CASE