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CSC1061B Datasheet(PDF) 2 Page - Continental Device India Limited |
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CSC1061B Datasheet(HTML) 2 Page - Continental Device India Limited |
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2 / 3 page ![]() Continental Device India Limited Data Sheet Page 2 of 3 Total power dissipation up to TC = 25°C Ptot max. 25 W Junction temperature Tj max. 150 ºC Storage temperature Tstg –65 to +150 ºC CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 20V ICBO max. 100 µA Breakdown voltages IC = 50 mA; IB = 0 VCEO min. 50 V IC = 5 mA; IE = 0 VCBO min. 50 V IE = 5 mA; IC = 0 VEBO min. 4.0 V Saturation voltages IC = 2 A; IB = 0.2 A VCEsat max. 1.0 V Base emitter on voltage IC = 1 A; VCE = 4 V VBE(on) max. 1.5 V D.C. current gain IC = 0.1A; VCE = 4V hFE min. 35 IC = 1A; VCE = 4V** hFE min. 35 max. 320 Transition frequency IC = 0.5A; VCE = 4V fT typ. 8 MHz **hFE classification: A: 35-70 B: 60-120 C: 100-200 D: 160-320 CSC1061 |
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