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IN100-Q1-R-RC1F Datasheet(PDF) 32 Page - List of Unclassifed Manufacturers

Part # IN100-Q1-R-RC1F
Description  Ultra-Low Power Bluetooth Beacon SoC
PDF  49 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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IN100-Q1-R-RC1F Datasheet(HTML) 32 Page - List of Unclassifed Manufacturers

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N1EDOC-DS-IN100-EN-V1.3
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cm, motional
capacitance
(*1)
2.2
3
fF
CL crystal load
capacitance
(*1), differential
6
8
pF
C0
(*1)
0.7
3
pF
On-chip CL
Differential, programmable in
0.5pF steps
0.5
8
pF
Start-up time
500
1000
us
Note: Crystal data sheet must meet these requirements.
4.11. eFuse memory programming (OTP)
eFuse (OTP memory) programming requires a 3.3V power supply to the device VDDQ pin, and
feeding the data through the UART port, as shown in
Figure 16.
Figure 16 : eFuse memory programming process
4.12. Radio frequency sub-system
The device incorporates a 2.4GHz ISM frequency band radio and GFSK modulator capable of
transmitting Bluetooth Low Energy 5 compliant advertising packets.
Table 13 : RF sub-system overview
Parameter
Description
Frequency band
2.4GHz ISM or medRadio-band
Data rate
125Kbps or 1Mbps



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