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FDB12N50F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # FDB12N50F
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FDB12N50F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
FDB12N50F
FEATURES
·
Drain Current : ID= 11.5A@ TC=25℃
·
Drain Source Voltage
: VDSS= 500V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.7Ω(Max) @ VGS= 10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
motor drive, DC-DC converter, power switch
and solenoid drive.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGSS
Gate-Source Voltage
±
30
V
ID
Drain Current-Continuous;@Tc=25℃
11.5
A
IDM
Drain Current-Single Pulsed
46
A
PD
Total Dissipation
165
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.75
℃
/W


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