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IRM
IBO
IH
IT
VRM
VT
VBR
MIN.
VBO
V-I Graph Illustrating Symbols and Terms
for the SiBOD Surge Protection Devices
Thyristors (SiBOD ™ Breakover Devices)
SiBOD
Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
SYMBOL
PARAMETER
VRM
Stand-off voltage
VBR
Breakdown voltage
VBO/VS
Breakover voltage
VT
On-state voltage
IRM
Stand-off current
IBO
Breakover current
IH
Holding current
Co
Off state Capacitance
Ipp
Peak pulse current
PARAMETER
Storage and operating junction
temperature range
Maximum temperature for soldering
(For period of 10 seconds max.)
Maximum case temperature
VALUE
ABSOLUTE RATINGS
SYMBOL
T stg
Tj
TL
TC
30
100
50
10
20
30
40
50
60
70
90
tr
t1
t2
td = 50
µs
VRSM
VRSM
tr=1.67 x (t2-t1)=1.2µs
Time (
µs)
10
100
50
10
2 0
30
40
50
90
t1
t2
tr
1RSM
1RSM
1SM
tr = 1.25 x (t2-t1) = 8 µs
td=
20
µs
or
Time (
µs)
DO-214
-40 to 150
150
230
75
TO-220
-40 to 150
150
230
115
T10
-40 to 150
150
230
75
UNIT
C˚
C˚
C˚
C˚
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