TLHG460., TLHR460., TLHY460.

www.vishay.com

Vishay Semiconductors

Rev. 2.3, 15-Sep-2021

2

Document Number: 83007

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) In one packing unit IVmin./IVmax.

≤ 0.5

Note

(1)

In one packing unit IVmin./IVmax.

≤ 0.5

(2) Not for new designs

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

TLHR460., TLHY460., TLHG460.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

VR

6V

DC forward current

Tamb

≤ 60 °C

IF

30

mA

Surge forward current

tp

≤ 10 μs

IFSM

1A

Power dissipation

Tamb

≤ 60 °C

PV

100

mW

Junction temperature

Tj

100

°C

Operating temperature range

Tamb

-20 to +100

°C

Storage temperature range

Tstg

-55 to +100

°C

Soldering temperature

t

≤ 5 s, 2 mm from body

Tsd

260

°C

Thermal resistance junction to ambient

RthJA

400

K/W

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

TLHR4600, TLHR4605, RED

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 10 mA

TLHR4600

IV

14

-

mcd

TLHR4605

IV

2.5

6

-

mcd

Dominant wavelength

IF = 10 mA

λd

612

-

625

nm

Peak wavelength

IF = 10 mA

λp

-

635

-

nm

Angle of half intensity

IF = 10 mA

ϕ

-± 60

-

°

Forward voltage

IF = 20 mA

VF

-2

3

V

Reverse voltage

IR = 10 μA

VR

615

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-50

-

pF

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

TLHY4600, TLHY4601, THLY4605, YELLOW

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 10 mA

TLHY4600

IV

0.63

3.5

-

mcd

TLHY4601 (2)

IV

14

-

mcd

TLHY4605

IV

2.5

5

-

mcd

Dominant wavelength

IF = 10 mA

λd

581

-

594

nm

Peak wavelength

IF = 10 mA

λp

-

585

-

nm

Angle of half intensity

IF = 10 mA

ϕ

-± 60

-

°

Forward voltage

IF = 20 mA

VF

-2.4

3

V

Reverse voltage

IR = 10 μA

VR

615

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-50

-

pF