100N03 datasheet(3/14 Pages) STMICROELECTRONICS

3 / 14 page

STD100N03L - STD100N03L-1

2 Electrical characteristics

3/14

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/Off states

Table 5.

Dynamic

Table 6.

Switching time

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown

Voltage

ID = 250µA, VGS= 0

IDSS

Zero Gate Voltage Drain

Current (VGS = 0)

VDS = Max Rating,

VDS = Max Rating, Tc=125°C

100

µA

IGSS

Gate Body Leakage Current

(VDS = 0)

VDS = ± 20 V

±200

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static Drain-Source On

Resistance

VGS= 10 V, ID= 40 A

VGS= 5 V, ID= 20 A

0.0045

0.008

0.0055

0.01

Ω

RDS(on)

Static Drain-Source On

Resistance

VGS= 10 V, ID= 40 A @125°C

VGS= 5 V, ID= 20 A @125°C

0.0068

0.0146

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs Note 4

Forward Transconductance

VDS = 10 V, ID= 15 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = 25V, f = 1 MHz, VGS =0

2060

728

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 24 V, ID = 80 A,

VGS = 5V

(see Figure 15)

7.5

Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV

Open Drain

1.9

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 15 V, ID = 40 A

RG= 4.7 Ω, VGS= 10V,

(see Figure 14)

205

td(off)

Turn-off Delay Time

Fall Time

VDD = 15 V, ID = 40 A

RG= 4.7 Ω, VGS= 10V,

(see Figure 14)

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