STF10NK50Z_V01 datasheet(3/13 Pages) STMICROELECTRONICS

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STF10NK50Z

Electrical ratings

Doc ID 022992 Rev 1

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

500

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

9 (1)

Limited by maximum junction temperature.

Drain current (continuous) at TC=100 °C

5.7 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

36 (1)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.24

W/°C

ESD

Gate-source human body model

(C=100 pF, R=1.5 k

Ω)

4kV

dv/dt(3)

ISD ≤9 A, di/dt ≤200 A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

4.2

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, ID=IAR, VDD=50 V)

230

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