©

1996

DATA SHEET

Document No. P11693EJ1V0DS00 (1st edition)

Date Published July 1996 P

Printed in Japan

SILICON POWER TRANSISTOR

2SC2586

DESCRIPTION

The 2SC2586 is an NPN silicon epitaxial transistor designed

for UHF-band medium power amplifiers.

FEATURES

• Medium power output

Pout = 1.6 W TYP. @ f = 500 MHz, VCC = 12.6 V, Pin = 0.2 W

ABSOLUTE MAXIMUM RATINGS (TA = 25

°°°°°C)

ELECTRICAL CHARACTERISTICS (TA = 25

°°°°°C)

NPN SILICON EPITAXIAL TRANSISTOR

FOR UHF-BAND POWER AMPLIFIER

INDUSTRIAL USE

PACKAGE DIMENSIONS (in millimeters)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

35

V

Collector to Emitter Voltage

VCEO

18

V

Emitter to Base Voltage

VEBO

3.0

V

Collector Current

IC

0.4

A

Total Power Dissipation

PT (TC = 25 °C)

7W

Junction Temperature

Tj

200

°C

Storage Temperature

Tstg

-65 to +200

°C

9.4 MAX.

φ

8.5 MAX.

φ

0.45

φ

5.08

φ

2

3

1

0.8

0.8

45

°

PIN CONNECTIONS

1. Collector

2. Base

3. Emitter

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 20 V, IC = 0

0.1

mA

Emitter Cut-off Current

IEBO

VEB = 2 V, IE = 0

0.1

mA

DC Current Gain

hFE

VCE = 10 V, IC = 100 mA (pulse)

20

60

200

-

Output Capacitance

Cob

VCB = 10 V, IE = 0, f = 1.0 MHz

2.5

4.0

pF

Output Power

Pout

f = 500 MHz, VCC = 12.6 V, Pin = 23 dBm

30.5

32

dBm

Collector Efficiency

η

C

55

65

%