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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±30

V

ID

Drain current (continuous) at TC = 25 °C

20

A

Drain current (continuous) at TC = 100 °C

12.5

IDM(1)

Drain current (pulsed)

60

A

PTOT

Total power dissipation at TC = 25 °C

140

W

dv/dt(2)

Peak diode recovery voltage slope

50

V/ns

di/dt(2)

Peak diode recovery current slope

900

A/μs

dv/dt(3)

MOSFET dv/dt ruggedness

120

V/ns

Tstg

Storage temperature range

-55 to 150

°C

TJ

Operating junction temperature range

°C

1. Pulse width is limited by safe operating area.

2. ISD ≤ 10 A, VDS (peak) < V(BR)DSS, VDD = 400 V.

3. VDS (peak) < V(BR)DSS, VDD ≤ 400 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case

0.89

°C/W

RthJA

Thermal resistance, junction-to-ambient

62.5

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max.)

4

A

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)

200

mJ

STP65N150M9

Electrical ratings

DS13496 - Rev 3

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