©

1996

DATA SHEET

SILICON TRANSISTOR

2SC2762

DESCRIPTION

The 2SC2762 is an NPN silicon epitaxial transistor designed for

UHF-band medium power amplifiers.

FEATURE

Medium power output

Pout = 1.4 W TYP. @f = 500 MHz, VCC = 12.6 V, Pin = 0.25 W

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

35

V

Collector to Emitter Voltage

VCEO

18

V

Emitter to Base Voltage

VEBO

3.0

V

Collector Current

IC

0.4

A

Total Power Dissipation

PT(TA = 25 ˚C)

800

mW

Total Power Dissipation

PT(TC = 25 ˚C)

7W

Junction Temperature

Tj

200

˚C

Storage Temperature

Tstg

–65 to +200

˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 20 V, IE = 0

0.1

mA

Emitter Cut-off Current

IEBO

VEB = 2 V, IC = 0

0.1

mA

DC Current Gain

hFE

VCE = 10 V, IC = 100 mA (pulse)

20

60

200

Output Capacitance

Cob

VCB = 10 V, IE = 0, f = 1.0 MHz*

2.5

4.0

pF

Output Power

Pout

f = 500 MHz, VCC = 12.6 V,

30

31.5

dBm

Pin = 24 dBm

Collector Efficiency

ηC

f = 500 MHz, VCC = 12.6 V,

60

80

%

Pin = 24 dBm

*

Emitter and case should be grounded.

Document No. P11672EJ1V0DS00 (1st edition)

Date Published July 1996 P

Printed in Japan

NPN SILICON EPITAXIAL TRANSISTOR

FOR UHF-BAND POWER AMPLIFIER

INDUSTRIAL USE

PACKAGE DIMENSIONS

(in millimeters)

φ

3

2

1

9.40 MAX.

φ8.50 MAX.

φ0.45

φ5.08

0.8

45˚

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

All leads insulated from case