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2SC5288 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SC5288
Description  NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
PDF  14 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5288 Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SC5288
2
Data Sheet PU10039EJ01V0DS
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0
2.5
µA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
2.5
µA
DC Current Gain
hFE
VCE = 3.6 V, IC = 100 mANote
60
—
Output Power
P–1
VCC = 3.6 V, f = 1.9 GHz,
23
24
dBm
Power Gain
GP
ICq = 1 mA (class AB operation)
7
8
dB
Collector Efficiency
ηC
Duty factor 1/8
50
60
%
Note
Pulse Measurement: PW
≤ 350
µs, Duty cycle ≤ 2 %, Pulsed
hFE Classification
Rank
KB
Marking
T89
hFE
more than 60
APPLICATION EXAMPLES
(1) Power amplifier for DECT
+3 dBm
PO = 27 dBm
2SC5289
2SC5288
2SC5192
(2) Power amplifier for PHS
+7 dBm
PL = 23 dBm
2SC5289
2SC5288



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