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SILICON TRANSISTOR

2SC4176

HIGH SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. D19099EJ2V0DS00 (2nd edition)

(Previous No. TC-2104)

Date Published January 2008 NS

Printed in Japan

1987, 2008

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

FEATURES

• High-speed switching

• Low collector saturation voltage

• High gain bandwidth product

• Low collector capacitance

• Can be used complementary to the 2SA1610.

• Small Package: 3-pin Super Small Package (SC-70)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°C)

Collector to Base Voltage

VCBO

40

V

Collector to Emitter Voltage

VCES

40

V

VCEO

15

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current

IC

200

mA

Total Power Dissipation

PT

150

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

ELECTRICAL CHRACTERISTICS (Ta = 25

°C)

CHARACTERISTIC

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 20 V, IE = 0 A

0.1

μA

Emitter Cut-off Current

IEBO

VEB = 3.0 V, IC = 0 A

0.1

μA

DC Current Gain

hFE

VCE = 1.0 V, IC = 10 mA

40

90

200

Collector Saturation Voltage

VCE(sat)

IC = 10 mA, IB = 1.0 mA

0.15

0.25

V

Base Saturation Voltage

VBE(sat)

IC = 10 mA, IB = 1.0 mA

0.80

0.85

V

Gain Bandwidth Product

fT

VCE = 10 V, IE =

−10 mA

500

750

MHz

Collector Capacitance

Cob

VCB = 5.0 V, IE = 0 A, f = 1.0 MHz

1.8

4.0

pF

Turn-on Time

ton

8.0

12

ns

Storage Time

tstg

6.0

13

ns

Turn-off Time

toff

(When tstg, IB1 =

−IB2 = 10 mA)

See Test Circuits

12

18

ns

hFE Classification

Marking

B33

B34

B35

hFE

40 to 80

60 to 120

100 to 200

PACKAGE DRAWING (Unit: mm)

2.1±0.1

1.25±0.1

2

1

3

Marking

1. Emitter

2. Base

3. Collector

<R>