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SILICON POWER TRANSISTOR

2SC4342

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR HIGH-SPEED SWITCHING

DATA SHEET

Document No. D14862EJ3V0DS00 (3rd edition)

Date Published July 2004 NS CP(K)

Printed in Japan

2002

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SC4342

TO-126 (MP-5)

DESCRIPTION

The 2SC4342 is a high-speed Darlington power transistor.

This transistor is ideal for high-precision control such as PWM

control for pulse motors or blushless of OA and FA equipment.

FEATURES

• On-chip C-to-E reverse diode

• Fast switching speed

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

VCBO

150

V

Collector to Emitter Voltage

VCEO

100

V

Emitter to Base Voltage

VEBO

8.0

V

Collector Current (DC)

IC(DC)

±3.0

A

Collector Current (pulse)

IC(pulse)

Note

±5.0

A

Base Current (DC)

IB(DC)

0.3

A

Total Power Dissipation (TA = 25°C)

PT1

1.3

W

Total Power Dissipation (TC = 25°C)

PT2

12

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note PW

≤ 10 ms, Duty Cycle ≤ 50%

The mark

★ shows major revised points.