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BC846DS Datasheet(PDF) 3 Page - Nexperia B.V. All rights reserved |
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BC846DS Datasheet(HTML) 3 Page - Nexperia B.V. All rights reserved |
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3 / 12 page ![]() BC846DS © Nexperia B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 3 of 12 Nexperia BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C FR4 PCB, standard footprint Fig 1. Per device: Power derating curve SOT457 (SC-74) Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tamb (°C) −75 175 125 25 75 −25 006aab621 200 300 100 400 500 Ptot (mW) 0 Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 500 K/W Rth(j-sp) thermal resistance from junction to solder point - - 250 K/W Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 328 K/W |
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