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2SC5186 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # 2SC5186
Description  NPN SILICON RF TRANSISTOR
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5186 Datasheet(HTML) 5 Page - Renesas Technology Corp

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Data Sheet PU10213EJ01V0DS
3
2SC5186
TYPICAL CHARACTERISTICS (TA = +25
°°°°C, unless otherwise specified)
250
200
150
100
90
50
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.8
0.6
0.4
0.2
02
4
6
10
8
f = 1 MHz
VCE = 2 V
50
40
20
30
10
0
0.5
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
IB = 20 A
µ
40 A
µ
60 A
µ
80 A
µ
100 A
µ
120 A
µ
140 A
µ
160 A
µ
180 A
µ
200 A
µ
25
20
10
15
5
01
2
34
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
100
200
10
20
50
210
520
50
1
100
VCE = 2 V
1 V
f = 2 GHz
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
15
5
10
35
7
10
20
2
1
0.7
30
VCE = 2 V
1 V



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