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2SC5843 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SC5843
Description  NPN SILICON GERMANIUM RF TRANSISTOR
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5843 Datasheet(HTML) 4 Page - Renesas Technology Corp

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Data Sheet PU10353EJ02V0DS
2
2SC5843
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
200
nA
Emitter Cut-off Current
IEBO
VEB = 0.5 V, IC = 0 mA
200
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 5 mA
200
400
RF Characteristics
Insertion Power Gain
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
16.0
18.0
dB
Noise Figure
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
0.9
1.1
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
0.17
0.22
pF
Maximum Stable Power Gain
MSG
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
18.0
20.0
dB
Notes 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank
FB
Marking
zD
hFE Value
200 to 400
S21
S12



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