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BC856BS_1

Product data sheet

Rev. 01 — 11 August 2009

3 of 12

Nexperia

BC856BS

65 V, 100 mA PNP/PNP general-purpose transistor

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VCBO

collector-base voltage

open emitter

-

−80

V

VCEO

collector-emitter voltage

open base

-

−65

V

VEBO

emitter-base voltage

open collector

-

−6V

IC

collector current

-

−100

mA

ICM

peak collector current

single pulse;

tp ≤ 1ms

-

−200

mA

IBM

peak base current

single pulse;

tp ≤ 1ms

-

−200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

200

mW

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

300

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−55

+150

°C

Tstg

storage temperature

−65

+150

°C

FR4 PCB, standard footprint

Fig 1.

Per device: Power derating curve SOT363 (SC-88)

Tamb (°C)

−75

175

125

25

75

−25

006aab618

200

300

100

400

500

Ptot

(mW)

0