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BAS35 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # BAS35
Description  SMD Small Signal Diodes SMD Kleinsignal-Dioden
PDF  3 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BAS35 Datasheet(HTML) 1 Page - Diotec Semiconductor

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BAS31, BAS35
BAS31, BAS35
SMD Small Signal Diodes
SMD Kleinsignal-Dioden
IFAV
= 200 mA
VF100mA < 900 mV
Tjmax
= 150°C
VRRM = 120 V
IFSM = 2 A
trr
< 50 ns
Version 2023-03-20
SOT-23
TO-236
SPICE Model & STEP File 1)
Marking Code
See below'XX' | Siehe unten 'XX'
HS Code 85411000
Typical Applications
Signal processing
(High-speed) Switching
Rectifying
Commercial / industrial grade
Suffix -Q: AEC-Q101 compliant 1)
Suffix -AQ: in AEC-Q101 qualification 1)
Typische Anwendungen
Signalverarbeitung
(Schnelles) Schalten
Gleichrichten
Standardausführung
Suffix -Q: AEC-Q101 konform 1)
Suffix -AQ: in AEC-Q101 Qualifikation 1)
Features
Very high switching speed
Compliant to RoHS (w/o exemp.),
REACH, Conflict Minerals 1)
Besonderheiten
Sehr schnelles Schalten
Konform zu RoHS (ohne Ausn.),
REACH, Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped and reeled
On request:
on 13“ reel ( suffix R13)
3000 / 7“
10.000 / 13“
Gegurtet auf Rolle
Auf Anfrage:
auf 13“-Rolle (Suffix R13)
Weight approx.
0.01 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
BAS31/-Q
'L21'
Series
Connection
BAS35
'L22'
Common
Anode
Maximum ratings 2)
Grenzwerte 2)
Power dissipation (per device) − Verlustleistung (pro Bauteil)
Ptot
350 mW 3)
Maximum average forward current
Dauergrenzstrom
single diode loaded – eine Diode belastet
both diodes loaded – beide Dioden belastet
IFAV
200 mA 3)
100 mA 3)
Repetitive peak forward current – Periodischer Spitzenstrom
IFRM
600 mA 3)
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp ≤ 1 s
tp ≤ 1 µs
IFSM
1 A
2 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM
120 V
Reverse voltage – Sperrspannung
DC
VR
90 V
Junction temperature − Sperrschichttemperatur
Storage temperature − Lagerungstemperatur
Tj
TS
-55...+150°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben
3
Mounted on 3 mm2 copper pads per terminal – Montage auf 3 mm2 Kupferbelag (Lötpads) je Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
2
1
3


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