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AU5790 Datasheet(PDF) 7 Page - NXP Semiconductors |
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AU5790 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 20 page ![]() Philips Semiconductors Product data AU5790 Single wire CAN transceiver 2001 May 18 7 DC CHARACTERISTICS –40 °C < Tamb < +125 °C; 5.5 V < VBAT < 16 V; –0.3 V < VTxD < 5.5 V; –0.3 V < VNSTB < 5.5 V; –0.3 V < VEN < 5.5 V; –0.3 V < VRxD < 5.5 V; –1 V < VCANH < +16 V; bus load resistor at pin RTH: 2 kΩ < RT < 9.2 kΩ; total bus load resistance 270 Ω < RL < 9.2 kΩ; CL < 13.7 nF; 1µs < RL ∗ CL < 4µs; RxD pull-up resistor 2.2 kΩ < Rd < 3.0 kΩ; RxD: loaded with CLR < 30pF to GND; all voltages are referenced to pin 8 (GND); positive currents flow into the IC; typical values reflect the approximate average value at VBAT = 13 V and Tamb = 25 °C, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Pin BAT VBAT Operating supply voltage Note 1 5.3 13 27 V VBATL Low battery state Part functional or in undervoltage lockout state 2.5 5.3 V VBATLO Supply undervoltage lockout state TxD = 1 or 0; check CANH and RxD are floating 2.5 V IBATPN Passive state supply current in normal mode NSTB = 5 V, EN = 5 V, TxD = 5 V 2 mA IBATPW Passive state supply current in wake-up mode NSTB = 0 V, EN = 5 V, TxD = 5 V, Note 2 3 mA IBATPH Passive state supply current in high speed mode NSTB = 5 V, EN = 0 V, TxD = 5 V, Note 2 4 mA IBATN Active state supply current in normal mode NSTB = 5 V, EN = 5 V, TxD = 0 V, RL = 270 Ω, Tamb = 125 °C 35 mA Tamb = 25 °C, –40 °C 40 mA IBATW Active state supply current in wake-up mode NSTB = 0 V, EN = 5 V, TxD = 0 V, RL = 270 Ω, Note 2, Tamb = 125 °C 70 mA Tamb = 25 °C, –40 °C, Note 2 90 mA IBATH Active state supply current in high speed mode NSTB = 5 V, EN = 0 V, TxD = 0 V, RL = 100 Ω, Note 2, Tamb = 125 °C 70 mA Tamb = 25 °C, –40 °C, Note 2 85 mA IBATS Sleep mode supply current NSTB = 0 V, EN = 0 V, TxD = 5 V, RxD = 5 V, –1 V < VCANH < +1 V, 5.5 V < VBAT < 14 V –40 °C < Tj < 125 °C 70 100 µA Pin CANH VCANHN Bus output voltage in normal mode NSTB = 5 V, EN = 5 V, RL > 270Ω; 5.5 V < VBAT < 27 V 3.65 4.1 4.55 V VCANHW Bus output voltage in wake-up mode NSTB = 0 V, EN = 5 V, RL > 270Ω; 11.3 V < VBAT < 16 V 9.80 min (VBAT, 13) V VCANHWL Bus output voltage in wake-up mode, low battery NSTB = 0 V, EN = 5 V, RL > 270Ω; 5.5 V < VBAT < 11.3 V VBAT – 1.45 VBAT V VCANHH Bus output voltage in high-speed transmission mode NSTB = 5 V, EN = 0 V, RL > 100Ω; 8 V < VBAT < 16 V 3.65 4.55 V ICANHRR Recessive state output current, bus recessive Recessive state or sleep mode, VCANH = –1 V; 0 V < VBAT < 27 V –10 10 µA ICANHRD Recessive state output current, bus dominant Recessive state or sleep mode, VCANH = 10 V; 0 V < VBAT < 16 V –20 100 µA ICANHDD Dominant state output current, bus dominant TxD = 0 V, normal mode, high-speed mode and sleep mode; VCANH = 10 V; 0 V < VBAT < 16 V –20 100 µA –ICANH_N Bus short circuit current, normal mode VCANH = –1 V, TxD = 0 V; NSTB = 5 V; EN = 5 V 30 150 mA –ICANHW Bus short circuit current, wake-up mode VCANH = –1 V, TxD = 0 V; NSTB = 0 V; EN = 5 V 60 190 mA |
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