1996 Mar 13

2

Philips Semiconductors

Product specification

AM band-switching diode

BA423A

FEATURES

• Continuous reverse voltage:

max. 20 V

• Continuous forward current:

max. 50 mA

• Low diode capacitance:

max. 2.5 pF

• Low diode forward resistance:

max. 1.2

Ω.

APPLICATION

• Band switching in AM radio

receivers.

DESCRIPTION

Planar band-switching diode in a hermetically sealed glass SOD68

(DO-34) package.

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

The diodes are type branded.

handbook, halfpage

MAM156

k

a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

THERMAL CHARACTERISTICS

Note

1. Device mounted on a FR4 printed-circuit board without metallization pad.

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

continuous reverse voltage

−

20

V

continuous forward current

−

50

mA

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

0.9

V

reverse current

see Fig.3

100

nA

µA

diode capacitance

2.5

pF

diode forward resistance

1.2

Ω

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to tie-point

lead length 10 mm

240

K/W

thermal resistance from junction to ambient

lead length 10 mm; note 1

500

K/W