RYZ024A datasheet(13/40 Pages) RENESAS

13 / 40 page

RYZ024A

Datasheet

R19DS0115EU0101 Rev.1.01

Page 13 of 38

Nov.14.22

Table 15 shows the values of the measured leakage current (measurements taken on silicon) for the PMU

wake inputs.

Table 15.

Measured Leakage Current for the PMU Wake Inputs

Minimum

Typical

Maximum

3 nA

4 nA

12 nA

Table 16 shows values of the external pull-up/pull-down resistor to be used on the PMU wake inputs pads.

Table 16.

External Pull-up/Pull-down Resistor to Be Used on the PMU Wake Input Pads

Minimum

Typical

Maximum

1 kOhm

10 kOhm

100 kOhm

Table 17 shows details about the PMU wake inputs pulses detection mechanism timings.

Table 17.

Details about the PMU Wake Inputs Pulses Detection Mechanism Timings

Maximum Pulse Width

that Is Guaranteed to Be

Ignored

Minimum Pulse Width that Is

Guaranteed to Be Seen

11. ns

100 μs

Table 18 provides the internal pull-up current range for RESETN.

Table 18.

Internal Pull-Up Strength for RESETN Pad

Minimum

Typical

Maximum

73.5 nA

100 nA

160.5 nA

Digital IO Characteristics

The voltage and current characteristics of the various IO pads of the RYZ024A are described in this section.

The I/Os belong to different power groups:

•

PVDD_1V8

•

PMU_5V

For each I/O of these power group, the operational voltage range is described

in Table 19 and Table 20.

Caution:

The PCB designer must ensure that the voltage on these pads never exceeds Vih VIH of the

power group to which they belong.

See Table 19 for digital IO characteristics of the different IO pads. Refer to each interface of RYZ024A in

section Interfaces to know the power group and IO pad type for each pad. Note that IN pads are inputs only

whereas BIDIR can be both inputs and output.

Table 19.

DC Characteristics for Digital IOs, Voltage 1.8 V, PVDD_1V8 Power Group

Symbol

Minimum

Maximum

Unit

VIH

Input HIGH level

1.26

3.3

VIL

Input LOW level

0.54

VOH

Output HIGH voltage

1.44

1.8

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