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BAS17 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BAS17 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1999 May 31 2 Philips Semiconductors Product specification Low-voltage stabistor BAS17 FEATURES • Low-voltage stabilization • Forward voltage range: 580 to 960 mV • Total power dissipation: max. 250 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias stabilizer in class-B output stages – Clipping – Clamping – Meter protection. DESCRIPTION Low-voltage stabilization diode in a small SOT23 plastic package. PINNING PIN DESCRIPTION 1 anode 2 not connected 3 cathode Fig.1 Simplified outline (SOT23), pin configuration and symbol. Marking code: A91. handbook, halfpage 21 3 MAM185 2 n.c. 1 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 5V IF continuous forward current − 200 mA Ptot total power dissipation Tamb =25 °C − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage see Fig.2 IF = 0.1 mA 580 − 660 mV IF = 1 mA 665 − 745 mV IF = 5 mA 725 − 805 mV IF = 10 mA 750 − 830 mV IF = 100 mA 870 − 960 mV IR reverse current VR =4V −− 5 µA rdif differential resistance IF = 0.5 mA − 120 −Ω IF =2mA − 80 −Ω SF temperature coefficient IF =1mA −−1.8 − mV/K Cd diode capacitance VR =0V; f=1MHz −− 140 pF |
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