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ISCND436D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCND436D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor ISCND436D DESCRIPTION · Collector–Emitter Sustaining Voltage VCEO: 500V(Min) · Low Collector Saturation Voltage : VCE(sat) =1.3V(Max.)@ IC= 2A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 12 A PC Total Power Dissipation @ TC=25℃ 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.57 ℃ /W |
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