Nexperia

BAS16TH

High-speed switching diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 1 mA

[1]

-

-

715

mV

IF = 10 mA

[1]

-

-

855

mV

IF = 50 mA

[1]

-

-

1

V

VF

forward voltage

IF = 150 mA

[1]

-

-

1.25

V

VR = 25 V; Tj = 25 °C

-

-

30

nA

VR = 80 V; Tj = 25 °C

-

-

0.5

µA

VR = 25 V; Tj = 150 °C

-

-

30

µA

IR

reverse current

VR = 80 V; Tj = 150 °C

-

-

50

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tj = 25 °C

-

-

1.5

pF

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tamb = 25 °C

-

-

4

ns

VFRM

peak forward recovery

voltage

IF = 10 mA; tr = 20 ns

-

-

1.75

V

[1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02

aaa-029051

10

1

102

103

IF

(mA)

10-1

VF (V)

0

1.4

1.0

1.2

0.8

0.6

0.2

0.4

(3)

(4)

(5)

(2)

(1)

(1) Tj = 175 °C

(2) Tj = 150 °C

(3) Tj = 85 °C

(4) Tj = 25 °C

(5) Tj = −40 °C

Fig. 2. Forward current as a function of forward

voltage; typical values

VF (V)

X

2.0

1.5

0.5

1.0

200

400

600

IF

(mA)

0

Tamb = 25 °C

Tamb = 150 °C

Tamb = 175 °C

aaa-029052

(1) Tj = 175 °C

(2) Tj = 150 °C

(3) Tj = 25 °C

Fig. 3. Forward current as a function of forward

voltage; typical values

BAS16TH

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Product data sheet

7 December 2018

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