1700V Half-Bridge Silicon Carbide

Power Module

GE17042CCA3

VDS: 1700 V IDS: 425 A

Superior performance for high power,

high frequency applications needing

best-in-class power density

Features

• Highly reliable GE SiC MOSFET devices

• Low RDS(ON)(3.75 mΩ) (device only)

• Low stray inductance (6 nH)

• Ultra-low switching losses over entire

operating range

GE Aviation

MOSFET DC Characteristics @ TJ = 25˚C (unless otherwise specified)

Symbols

Parameters

Min.

Typ.

Max.

Unit

Test Conditions

Notes

IDS

Continuous Drain Current

425

A

VGS = 20 V, Tc = 25˚C

Per Switch

300

VGS = 20 V, Tc = 100˚C

245

VGS = 20 V, Tc = 125˚C

IDS,pulse

Pulsed Drain Current

850

A

Tc = 25˚C, tp = 1 ms

VDSmax

Drain - Source Breakdown

Voltage

1700

V

VGS = 0 V, IDS = 100 µA

VGSmax

Maximum Gate - Source

Voltage

-15/+23

V

VDS = 0 V

VGSop

Recommended Gate -

Source Voltage

-5/+20

V

TJmax

Junction Temperature

175

˚C

TC

Case Temperature Range

-55

150

˚C

TSTG

Storage Temperature Range

-55

150

˚C

PD

Power Dissipation

1250

W

Tc = 25˚C

• Body diode with minimal reverse

recovery

• Integrated temperature sensing

• Dedicated DESAT Pin and Source-

Kelvin Pin

• AlSiC Baseplate and Si3N4 AMB

Substrate