BCX41Q

Document number: DS39808 Rev. 1 - 2

4 of 7

www.diodes.com

October 2017

© Diodes Incorporated

BCX41Q

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

BVCES

125

—

—

V

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

125

—

—

V

ICEO = 10mA

Emitter-Base Breakdown Voltage

BVEBO

7

—

—

V

IEBO = 10µA

Collector-Base Cut-Off Current

ICES

—

—

—

—

100

10

nA

µA

VCB = 100V

VCB = 100V, TA = +150°C

Collector Cut-Off Current

ICEX

—

—

—

—

10

75

µA

µA

VCE = 100V, VBE = 0.2V,

TA = +85°C

VCE = 100V, VBE = 0.2V,

TA = +125°C

Emitter-base Cut-off Current

IEBO

—

—

100

nA

VEB = 5.6V

ON CHARACTERISTICS (Note 10)

Static Forward Current Transfer Ratio

hFE

25

63

40

—

—

—

IC = 100µA, VCE = 1V

IC = 100mA, VCE = 1V

IC = 200mA, VCE = 1V

Collector-Emitter Saturation Voltage

VCE(SAT)

—

—

0.9

V

IC = 300mA, IB = 30mA

Base-Emitter Saturation Voltage

VBE(SAT)

—

—

1.4

V

IC = 300mA, IB = 30mA

SMALL SIGNAL CHARACTERISTICS (Note 10)

Transition Frequency

fT

—

100

—

MHz

IC = 10mA, VCE = 5V,

f = 20MHz

Output Capacitance

COBO

—

12

—

pF

VCB = 10V, f = 1MHz

Note:

10. Measured under p

ulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.