P-Channel Enhancement Mode Field Effect Transistor

CEM2163

FEATURES

-20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V.

RDS(ON) = 30mΩ @VGS = -2.5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS T

A = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation

VDS

VGS

ID

PD

IDM

-20

2.5

-36

-8.9

±12

V

W

A

A

V

SO-8

1

D

D

D

D

S

S

S

G

1

2

3

4

8

7

6

5

Lead free product is acquired.

http://www.cet-mos.com

Rev 1.

2010.Oct

Specification and data are subject to change without notice .

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient b

Parameter

Symbol

Limit

Units

C/W

50

R

θJA

1