BC337 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

BC337

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. VBE decreases by about 2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

0.2

K/mW

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−−

100

IE = 0; VCB = 20 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 100 mA; VCE =1V;

see Figs 2, 3 and 4

BC337

100

−

600

BC337-16

100

−

250

BC337-25

160

−

400

BC337-40

250

−

600

DC current gain

IC = 500 mA; VCE =1V;

see Figs 2, 3 and 4

−−

VCEsat

collector-emitter saturation

voltage

IC = 500 mA; IB =50mA

−−

700

VBE

base-emitter voltage

IC = 500 mA; VCE = 1 V; note 1

−−

1.2

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

−−

MHz

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