4

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Charge

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

0

2

4

6

8

10

0

2

4

6

8

10

12

Q

g -Total Gate Charge (nC)

I

D = 3 A

V

DS = 20 V

0.001

0.01

0.1

1

10

100

0.0

0.3

0.6

0.9

1.2

1.5

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

-0.5

-0.2

0.1

0.4

0.7

1.0

- 50

- 25

0

25

50

75

100

125

150

175

T

J -Temperature (°C)

I

D = 250 μA

I

D = 5 mA

0.5

0.9

1.3

1.7

2.1

2.5

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 3 A

V

GS = 4.5 V

V

GS = 10 V

0.0

0.2

0.4

0.6

0.8

1.0

02468

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

-50

-48

-46

-44

-42

-40

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 1 mA

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