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BAW101S Datasheet(PDF) 4 Page - Nexperia B.V. All rights reserved |
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BAW101S Datasheet(HTML) 4 Page - Nexperia B.V. All rights reserved |
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4 / 9 page ![]() Nexperia BAW101S High voltage double diode 600 IF (mA) 0 200 400 mbg384 0 2 1 VF (V) (1) (3) (2) (1) Tj = 150 °C; typical values (2) Tj = 25 °C; typical values (3) Tj = 25 °C; maximum values Fig. 2. Forward current as a function of forward voltage mbg703 10 1 102 IFSM (A) 10- 1 tp (µs) 1 104 103 10 102 Based on square wave currents. Tj(init) = 25 °C Fig. 3. Non-repetitive peak forward current as a function of pulse duration; maximum values 200 100 50 0 150 102 10 1 10- 1 10- 2 mle058 (1) (2) Tj (°C) IR (µA) VR = VRmax VR = VRmax Fig. 4. Reverse current as a function of junction temperature; typical values 0 2 10 0.6 0.5 0.3 0.2 0.4 4 VR (V) Cd (pF) 6 8 mle059 f = 1 MHz Tj = 25 °C Fig. 5. Diode capacitance as a function of reverse voltage; typical values BAW101S All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. All rights reserved Product data sheet 1 October 2022 4 / 9 |
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