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L6382D Datasheet(PDF) 3 Page - STMicroelectronics

Part # L6382D
Description  Power management unit for microcontrolled ballast
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6382D Datasheet(HTML) 3 Page - STMicroelectronics

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L6382D
Table 2. Pin Functions
N.
Pin
Function
1
PFI
Digital input signal to control the PFC gate driver. This pin has to be connected to a TTL
compatible signal.
2
LSI
Digital input signal to control the half-bridge low side driver. This pin has to be connected to a
TTL compatible signal.
3
HSI
Digital input signal to control the half-bridge high side driver. This pin has to be connected to a
TTL compatible signal.
4
HEI
Digital input signal to control the HEG output. This pin has to be connected to a TTL compatible
signal.
5
PFG
PFC Driver Output. This pin must be connected to the PFC power MOSFET gate. A resistor
connected between this pin and the power MOS gate can be used to reduce the peak current.
An internal 10K
Ω resistor toward ground avoids spurious and undesired MOSFET turn-on
The totem pole output stage is able to drive the power MOS with a peak current of 120mA
source and 250mA sink.
6
N.C.
Not connected
7
TPR
Input for two point regulator; by coupling the pin with a capacitor to a switching circuit, it is
possible to implement a charge circuit for the Vcc.
8
GND
Chip ground. Current return for both the low-side gate-drive currents and the bias current of the
IC. All of the ground connections of the bias components should be tied to a track going to this
pin and kept separate from any pulsed current return.
9
LSG
Low Side Driver Output. This pin must be connected to the gate of the half-bridge low side
power MOSFET. A resistor connected between this pin and the power MOS gate can be used
to reduce the peak current.
An internal 20K
Ω resistor toward ground avoids spurious and undesired MOSFET turn-on.
The totem pole output stage is able to drive power with a peak current of 120mA source and
120mA sink.
10
Vcc
Supply Voltage for the signal part of the IC and for the drivers.
11
BOOT
High-side gate-drive floating supply Voltage. The bootstrap capacitor connected between this
pin and pin 13 (OUT) is fed by an internal synchronous bootstrap diode driven in phase with the
low-side gate-drive. This patented structure normally replaces the external diode.
12
HSG
High Side Driver Output. This pin must be connected to the gate of the half bridge high side
power MOSFET . A resistor connected between this pin and the power MOS gate can be used
to reduce the peak current.
An internal 20K
Ω resistor toward OUT pin avoids spurious and undesired MOSFET turn-on
The totem pole output stage is able to drive the power MOS with a peak current of 120mA
source and 120mA sink.
13
OUT
High-side gate-drive floating ground. Current return for the high-side gate-drive current. Layout
carefully the connection of this pin to avoid too large spikes below ground.
14
N.C.
Not connected
15
HVSU
High-voltage start-up. The current flowing into this pin charges the capacitor connected
between pin Vcc and GND to start up the IC. Whilst the chip is in save mode, the generator is
cycled on-off between turn-on and
save mode voltages. When the chip works in operating
mode the generator is shut down and it is re-enabled when the Vcc voltage falls below the
UVLO threshold. According to the required VREF pin current, this pin can be connected to the
rectified mains voltage either directly or through a resistor.
16
N.C.
High-voltage spacer. The pin is not connected internally to isolate the high-voltage pin and
comply with safety regulations (creepage distance) on the PCB.
17
HEG
Output for the HEI block; this driver can be used to drive the MOS employed in isolated
filaments preheating. An internal 20K
Ω resistor toward ground avoids spurious and undesired
MOSFET turn-on.



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