1

MMBR901LT1, T3

MOTOROLA RF DEVICE DATA

The RF Line

NPN Silicon

High-Frequency Transistor

Designed primarily for use in high–gain, low–noise small–signal amplifiers for

operation up to 2.5 GHz. Also usable in applications requiring fast switching

times.

• High Current–Gain — Bandwidth Product

• Low Noise Figure @ f = 1.0 GHz —

NF(matched) = 1.9 dB (Typ)

• High Power Gain —

Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz

• Surface Mounted SOT–23 Offers Improved RF Performance,

Lower Package Parasitics and High Gain

• Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel

T3 suffix = 10,000 units per reel

NOT RECOMMENDED FOR NEW DESIGNS;

PRODUCT TO BE PHASED OUT.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

15

Vdc

Collector–Base Voltage

VCBO

25

Vdc

Emitter–Base Voltage

VEBO

2.0

Vdc

Collector Current — Continuous

IC

30

mAdc

Power Dissipation @ TC = 75°C (1)

Derate above 75

°C

PD(max)

0.300

4.0

Watt

mW/

°C

Storage Temperature Range

Tstg

– 55 to +150

°C

Maximum Junction Temperature

TJ(max)

150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Storage Temperature

Tstg

150

°C

Thermal Resistance, Junction to Case

R

θJC

250

°C/W

DEVICE MARKING

MMBR901LT1, T3 = 7A

NOTE:

1. Case temperature measured on collector lead immediately adjacent to body of package.

Order this document

by MMBR901LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMBR901LT1, T3

IC = 30 mA

SURFACE MOUNTED

HIGH–FREQUENCY

TRANSISTOR

NPN SILICON

CASE 318–08, STYLE 6

SOT–23

© Motorola, Inc. 1999

REV 10

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com