BAS45AL

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Nexperia B.V. 2010. All rights reserved.

Product data sheet

Rev. 5 — 6 August 2010

3 of 11

Nexperia

BAS45AL

Low-leakage diode

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

[1]

When switched from IF = 10 mA to IR =10mA; RL = 100

Ω; measured at IR =1mA.

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-t)

thermal resistance from

junction to tie-point

-

-

300

K/W

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

375

K/W

Table 7.

Characteristics

Tj =25

°C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

IF = 1 mA

-

-

780

mV

IF = 10 mA

-

-

860

mV

IF = 100 mA

-

-

1000

mV

IR

reverse current

Emax =100 lx

VR = 125 V

-

-

1

nA

VR =30V; Tj = 125

°C

-

-

300

nA

VR = 125 V; Tj =125

°C

-

-

500

nA

VR = 125 V; Tj =150

°C

--2

μA

Cd

diode capacitance

VR = 0 V; f = 1 MHz

--4

pF

trr

reverse recovery time

[1] -1.5

-

μs