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BFS17 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BFS17 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 6 page ![]() September 1995 4 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 Fig.2 DC current gain as a function of collector current. VCE = 1 V; Tj =25 °C. handbook, halfpage 0 100 50 0 10 30 MEA395 20 IC (mA) hFE Fig.3 Collector capacitance as a function of collector-base voltage. IE =ie = 0; f = 1 MHz; Tj =25 °C. handbook, halfpage MEA396 0 2.0 0 1.6 30 1.2 0.4 Cc (pF) VCB (V) 10 0.8 20 Fig.4 Transition frequency as a function of collector current. VCE = 5 V; f = 500 MHz; Tj =25 °C. handbook, halfpage MEA393 010 20 30 2 0 1 IC (mA) fT (GHz) Fig.5 Minimum noise figure as a function of collector current. VCE = 5 V; RS =50 Ω; f = 500 MHz; Tj =25 °C. handbook, halfpage MEA397 0 10 0 12 48 F (dB) 5 16 20 IC (mA) |
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